征文主题：Si、Ge、SOI、GOI、SiC和化合物半导体等衬底材料；用于集成电路和光电器件制造的高-k/金属栅叠层、Low-k材料、GeSi外延层、GeSn外延层、PCRAM存储材料、RRAM介质材料、STT-MRAM用磁性薄膜等新型薄膜材料；光刻胶、DSA、各类CVD和ALD前驱体、CMP抛光材料、工艺化学品、靶材等集成电路制造工艺材料；新型显示材料；先进封装材料；新型二维材料；新型存储材料与技术显示材料；碳纳米管，石墨烯等碳基功能材料；材料检测技术与方法；材料设计理论与计算模拟。

 Main Topics: (Interest include, but not limited to)

      Substrate materials such as Si, Ge, SOI, GOI, SiC and compound semiconductors;
       High-k, Low-k, GeSi, GeSn, PCRAM, RRAM, STT-MRAM, and other materials used in integrated circuits and optoelectronic devices;
       New display materials;
       Carbon nanotubes, graphene and other carbon based functional materials;
       Photoresists, DSA, CVD and ALD precursors, CMP materials, process chemicals and targets for integrated circuit fabrication and manufacturing;
       Advanced packaging materials; 
       Materials characterization technology and methods;
       Materials design theory and simulation;
       Novel two dimensional materials;
       Post-CMOS device options;
       Novel memory materials and technologies.

 分会主席：

 承办单位：

 支持单位：中国科学院上海微系统与信息技术研究所

 论文出版：可推荐至 Springer的Proceedings系列《Lecture Notes in Electrical Engineering》(EI收录）发表。作者也可根据自身情况选择期刊，并提前告知大会联系人。

 联系方式：

                       13818144065，   songsannian@mail.sim.ac.cn